TypeSolid State modules (SSM)
shape factorM.2 2280
InterfaceM.2/?M-Key (PCIe 4.0 x4)
Read6400MB/?s
Write2700MB/s SLC-Cached (500MB/s TLC)
IOPS 4K read/Write500k/?600k
memory modules3D-NAND TLC, Samsung, 136 Layer (V-NAND v6)
TBW150TB
Reliability prediction1.5 Mio. hours (MTBF)
controllerSamsung Elpis (S4LV003), 8 channels
cache512MB (LPDDR4), SLC-Cache (4-9GB)
ProtocolNVMe 1.3c
Data protection features256bit AES, TCG opal 2.0
Power consumption7W (maximum), 5W (operation), 0.035W (idle), 0.005W (Sleep mode)
Dimensions80x22x2.38mm
Special featuresL1.2 Low-Power-standby
Warrantyfive years or or when the device reaches the total TBW
